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Cambridge Studies in Semiconductor Physics and Microelectronic Engineering: Doping in III-V Semiconductors

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Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.

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Cambridge Studies in Semiconductor Physics and Microelectronic Engineering: Doping in III-V Semiconductors, Haroon Ahmad, E. Fred Schubert, Michael P. Peppers

Taal
Jaar van publicatie
2005
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Titel
Cambridge Studies in Semiconductor Physics and Microelectronic Engineering: Doping in III-V Semiconductors
Taal
Engels
Jaar van publicatie
2005
Formaat
Paperback
Aantal pagina's
632
ISBN10
052101784X
ISBN13
9780521017848
Reeks
Beoordeling
4 van 5
Aantekening
Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.